BAS19 / BAS20 / BAS21
Document number: DS12004 Rev. 21 - 2
2 of 4
www.diodes.com
November 2011
? Diodes Incorporated
BAS19 / BAS20 / BAS21
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol BAS19 BAS20 BAS21 Unit
Repetitive Peak Reverse Voltage
VRRM
120 200 250 V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
100 150 200 V
RMS Reverse Voltage
VR(RMS)
71 106 141 V
Forward Continuous Current (Note 4)
IFM
400 mA
Average Rectified Output Current (Note 4)
IO
200 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
2.5
0.5
A
Repetitive Peak Forward Surge Current (Note 4)
IFRM
625 mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4)
PD
250
mW
Thermal Resistance Junction to Ambient Air (Note 4)
RθJA
500
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 5)
BAS19
BAS20
V(BR)R
200
?
V
IR
= 100
μA
250
BAS21
120
Forward Voltage
VF
?
1.0
1.25
V
IF
= 100mA
IF
= 200mA
Reverse Current @ Rated DC Blocking Voltage (Note 5)
IR
?
100
15
nA
μA
TJ
= 25
°C
TJ
= 100
°C
Total Capacitance
CT
?
5.0
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
50
ns
IF
= I
R
= 30mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
0140
80
20160
200
250
200
150
50
100
T , AMBIENT TEMPERATURE ( C)A
°
Fig. 1 Power Derating Curve
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
Note 4
0.001
0
0.01
0.1
1
0.40.2
0. 6
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics
0.8
1.2
1.0
1.4
相关PDF资料
BAS19W-7-F DIODE SWITCH 100V 200MW SC70-3
BAS19 DIODE GEN PURP 120V 200MA SOT23
BAS20HT1 DIODE SS SW 200V 200MA SOD-323
BAS20LT3G DIODE SWITCH 200MA 200V SOT-23
BAS20 DIODE GEN PURP 200V 200MA SOT23
BAS21_ND87Z DIODE GEN PURP 250V 200MA SOT23
BAS216,115 DIODE SW 75V 250MA HS SOD110
BAS21AHT1G DIODE SWITCH LL 250V SOD-323
相关代理商/技术参数
BAS19-AU 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SWITCHING DIODES Fast switching speed
BAS19-E3-08 制造商:Vishay Siliconix 功能描述:BAS19-E3-08 - Cut TR (SOS) 制造商:Vishay Siliconix 功能描述:BAS19-E3-08 - Bulk 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
BAS19-E3-18 制造商:Vishay Siliconix 功能描述:BAS19-E3-18 - Cut TR (SOS) 制造商:Vishay Siliconix 功能描述:BAS19-E3-18 - Bulk 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
BAS19E6327 制造商:Infineon Technologies AG 功能描述:Diode Switching 120V 0.25A 3-Pin SOT-23 T/R
BAS19E-6327 制造商:NA 功能描述:19E-6327
BAS19-G3-08 制造商:Vishay Siliconix 功能描述:BAS19-G3-08 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 120 Volt 200mA 50ns 2.5A IFSM 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
BAS19-G3-18 制造商:Vishay Siliconix 功能描述:BAS19-G3-18 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 120 Volt 200mA 50ns 2.5A IFSM 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
BAS19-GS08 功能描述:二极管 - 通用,功率,开关 120 Volt Fast Switch RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube